Wednesday, 12 November 2014

CT60AM N Channel IGBT


                      CT60AM-18F

                   N Channel IGBT

    INSULATED GATE BIPOLAR 
         TRANSISTOR ( IGBT)

Package  TO-3PL

1.  Simple drive
2.  Integrated Fast-recovery diode
3. Small tail loss
4. Low VCE Saturation Voltage
APPLICATION
Microwave oven, Electromagnetic cooking devices, Rice-cookers, Treadmill Motor driver

Collector-Emitter Voltage          900V
Gate-Emitter Voltage               +/- 25V
Peak Gate-Emitter Voltage     +/- 30V
Continuous  Collector Current    60A
Collector Current (Pulse)            120A
Emitter Current                            40A
Maximum Power Dissipation    180W
Junction Temperature   
-40 to +150 degree
Storage Temperature    
-40 to +150 degree

Package Description 




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