CT60AM-18F
N Channel IGBT
INSULATED GATE BIPOLAR
TRANSISTOR ( IGBT)
Package TO-3PL
1. Simple
drive
2. Integrated Fast-recovery diode
3. Small tail loss
4. Low VCE Saturation Voltage
3. Small tail loss
4. Low VCE Saturation Voltage
APPLICATION
Microwave oven, Electromagnetic cooking devices, Rice-cookers, Treadmill Motor driver
Microwave oven, Electromagnetic cooking devices, Rice-cookers, Treadmill Motor driver
Collector-Emitter
Voltage 900V
Gate-Emitter
Voltage +/- 25V
Peak
Gate-Emitter Voltage +/- 30V
Continuous
Collector Current 60A
Collector
Current (Pulse) 120A
Emitter Current 40A
Maximum Power Dissipation 180W
Junction Temperature
Emitter Current 40A
Maximum Power Dissipation 180W
Junction Temperature
-40 to +150 degree
Storage Temperature
Storage Temperature
-40 to +150 degree
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